SPP18P06P Description
Preliminary data SPP18P06P SPB18P06P SIPMOS ® Power-Transistor.
SPP18P06P Key Features
- 60 0.13 -18.6
- 74.4 150 8 6 kV/µs mJ
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ
- SPP18P06P SPB18P06P
- 60 -2.1
- VGS = -20 V, VDS = 0 V
- 8 690 230 95 12