SPP70N10L
SPP70N10L is SIPMOS Power-Transistor manufactured by Infineon.
Feature
SIPMOS =Power-Transistor
Product Summary VDS RDS(on) ID
P-TO262-3-1 P-TO263-3-2
N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated
100 16 70
P-TO220-3-1
V m A
Type SPP70N10L SPB70N10L SPI70N10L
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67040-S4175 Q67040-S4170 Q67060-S7428
Marking 70N10L 70N10L 70N10L
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 70 50
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg
Page 1
280 700 25 6 ±20 250 -55... +175 55/175/56 2001-08-24 k V/µs V W °C m J
Avalanche energy, single pulse
ID =70 A , VDD =25V, RGS =25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS =70A, VDS =0V, di/dt=200A/µs
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC...
