SPP80N03S2-03
SPP80N03S2-03 is OptiMOS Power-Transistor manufactured by Infineon.
eature
- N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 3.1 80
P- TO220 -3-1
V mΩ A
- Enhancement mode
- Excellent Gate Charge x RDS(on) product (FOM)
- Superior thermal resistance
P- TO262 -3-1
- 175°C operating temperature
- Avalanche rated
- dv/dt rated
Type SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03
Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1
Ordering Code Q67040-S4247 Q67040-S4258 Q67042-S4079
Marking 2N0303 2N0303 2N0303
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80 320 810 30 6 ±20 300 -55... +175 55/175/56
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω m J
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C k V/µs V W °C
Gate source voltage Power...