• Part: SPP80N03S2-03
  • Description: OptiMOS Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 456.41 KB
Download SPP80N03S2-03 Datasheet PDF
Infineon
SPP80N03S2-03
SPP80N03S2-03 is OptiMOS Power-Transistor manufactured by Infineon.
eature - N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 3.1 80 P- TO220 -3-1 V mΩ A - Enhancement mode - Excellent Gate Charge x RDS(on) product (FOM) - Superior thermal resistance P- TO262 -3-1 - 175°C operating temperature - Avalanche rated - dv/dt rated Type SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67040-S4247 Q67040-S4258 Q67042-S4079 Marking 2N0303 2N0303 2N0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 810 30 6 ±20 300 -55... +175 55/175/56 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω m J Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=24V, di/dt=200A/µs, T jmax=175°C k V/µs V W °C Gate source voltage Power...