• Part: SPP80N04S2-04
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 305.35 KB
Download SPP80N04S2-04 Datasheet PDF
Infineon
SPP80N04S2-04
SPP80N04S2-04 is Power-Transistor manufactured by Infineon.
ature - N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 40 3.4 80 P- TO220 -3-1 V mΩ A - Enhancement mode - 175°C operating temperature - Avalanche rated - dv/dt rated Type SPP80N04S2-04 SPB80N04S2-04 SPI80N04S2-04 Package Ordering Code Marking 2N0404 2N0404 2N0404 Value 80 80 Unit A P- TO220 -3-1 Q67040-S4260 P- TO263 -3-2 Q67040-S4257 P- TO262 -3-1 Q67060-S6173 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current 1) TC=25°C TC=100°C Pulsed drain current TC=25°C I D puls EAS EAR dv/dt VGS Ptot T j , T stg 320 810 30 6 ±20 300 -55... +175 55/175/56 k V/µs V W °C m J Avalanche energy, single pulse ID=80A, VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=32V, di/dt=200A/µs, Tjmax =175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC...