SPP80N06S2L-H5
SPP80N06S2L-H5 is Power-Transistor manufactured by Infineon.
Feature
- N-Channel
55 5 80
P- TO220 -3-1
V mΩ A
- Enhancement mode
- 175°C operating temperature
- dv/dt rated
Type SPP80N06S2L-H5 SPB80N06S2L-H5
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6054 Q67060-S6055
Marking 2N06LH5 2N06LH5
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1)
TC=25°C
Value 80 80
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot T j , Tstg
320 700 6 ±20 300 -55... +175 55/175/56 m J k V/µs V W °C
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
Reverse diode d v/dt
IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
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SPP80N06S2L-H5 SPB80N06S2L-H5
Symbol min. Values typ. 0.34 max. 0.5 62 62 40 K/W Unit
Thermal Characteristics Parameter Characteristics Thermal resistance, junction
- case Thermal resistance, junction
- ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
2)
Rth JC Rth JA Rth JA
- Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown...
