SPP80N06S2-09 - N-Channel MOSFET

Description

Drain Current ID= 80A@ TC=25℃ Drain Source Voltage- : VDSS= 60V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM R

INCHANGE

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Datasheet Details

Part number	SPP80N06S2-09
Manufacturer	Inchange Semiconductor
File Size	217.53 KB
Description	N-Channel MOSFET
Datasheet	SPP80N06S2-09 Datasheet
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isc N-Channel MOSFET Transistor SPP80N06S2-09 ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 80 A ID(puls) Pulse Drain Current 320 A Ptot Total Dissipation@TC=25℃ 190 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.79 ℃/W isc website：www.

Published: Dec 3, 2020 |