Datasheet Details
| Part number | SPP80N06S2-09 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.53 KB |
| Description | N-Channel MOSFET |
| Download | SPP80N06S2-09 Download (PDF) |
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| Part number | SPP80N06S2-09 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.53 KB |
| Description | N-Channel MOSFET |
| Download | SPP80N06S2-09 Download (PDF) |
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·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 80 A ID(puls) Pulse Drain Current 320 A Ptot Total Dissipation@TC=25℃ 190 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.79 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=250µA VGS(th) Gate Threshold Voltage VDS= VGS;
isc N-Channel MOSFET Transistor SPP80N06S2-09 ·.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SPP80N06S2-09 | Power-Transistor | Infineon Technologies |
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|---|---|
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