SPP80N06S2-09 Datasheet and Specifications PDF

·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation .

ID=250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS= 80A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 50A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 80V; VGS= 0 SPP80N06S2-09 MIN TYPE MAX.

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare.

* N-Channel 55 9.1 80 P- TO220 -3-1 V mΩ A
* Enhancement mode
* 175°C operating temperature
* Avalanche rated
* dv/dt rated Type SPP80N06S2-09 SPB80N06S2-09 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6025 Q67060-S6027 Marking 2N0609 2N0609 Maximum Ratings, at Tj = 25 °C, unles.