SPP80N06S2-09
SPP80N06S2-09 is Power-Transistor manufactured by Infineon.
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SPP80N06S2-09 SPB80N06S2-09
Product Summary VDS R DS(on) ID
P- TO263 -3-2
OptiMOS® Power-Transistor
Feature
- N-Channel
55 9.1 80
P- TO220 -3-1
V mΩ A
- Enhancement mode
- 175°C operating temperature
- Avalanche rated
- dv/dt rated
Type SPP80N06S2-09 SPB80N06S2-09
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6025 Q67060-S6027
Marking 2N0609 2N0609
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 70
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
320 370 19 6 ±20 190 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single...
