• Part: SPU30N03S2-08
  • Description: OptiMOS Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 295.00 KB
Download SPU30N03S2-08 Datasheet PDF
Infineon
SPU30N03S2-08
SPU30N03S2-08 is OptiMOS Power-Transistor manufactured by Infineon.
Feature - N-Channel Product Summary VDS R DS(on) ID 30 8.2 30 P- TO251 -3-1 V mΩ A - Enhancement mode - Low On-Resistance RDS(on) .. - Excellent Gate Charge x RDS(on) product (FOM) - Superior thermal resistance - 175°C operating temperature - Avalanche rated - dv/dt rated Type SPU30N03S2-08 Package P- TO251 -3-1 Ordering Code Q67042-S4140 Marking 2N0308 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1) TC=25°C 1) Symbol ID Value 30 30 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 250 12 6 ±20 125 -55... +175 55/175/56 k V/µs V W °C m J Avalanche energy, single pulse ID=30 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=30A, VDS=24V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-04-30 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal .. resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling...