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112N06LD - MOSFET

General Description

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Key Features

  • Dual N-channel, Logic level.
  • Fast switching MOSFETs for SMPS.
  • Optimized technology for Synchronous Rectification.
  • Pb-free plating; RoHS compliant.
  • 100% Avalanche tested.
  • Superior Thermal Resistance.
  • Halogen-free according to IEC61249-2-21 Product Validation Qualified for industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC112N06LD MOSFET OptiMOSTM-T2PowerTransistor,60V Features ·DualN-channel,Logiclevel ·FastswitchingMOSFETsforSMPS ·OptimizedtechnologyforSynchronousRectification ·Pb-freeplating;RoHScompliant ·100%Avalanchetested ·SuperiorThermalResistance ·Halogen-freeaccordingtoIEC61249-2-21 ProductValidation Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 11.2 mΩ ID 20 A PG-TDSON-8-4 8765 1 234 1234 8765 D1 D1 D2 D2 S1 G1 S2 G2 Type/OrderingCode BSC112N06LD Package SSO8 dual (TDSON-8-4) Marking 112N06LD RelatedLinks - Final Data Sheet 1 Rev.2.