Datasheet4U Logo Datasheet4U.com

1EDF5673K - GaN gate driver

General Description

CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state.

Besides, due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be needed.

Key Features

  • Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products).
  • low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink).
  • resistor programmable gate current (typ. 10 mA) in steady “on” state.
  • programmable negative gate voltage to completely avoid spurious turn-on.
  • Single output supply voltage (typ. 8 V, floating).
  • Switching behavior independent of duty-cycle (2 "off" voltage levels).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Infineon

Part Number Description
1EDF5673F GaN gate driver
1ED020I12-B2 Single channel isolated gate driver
1ED020I12-BT Single channel isolated gate driver
1ED020I12-F Single IGBT Driver
1ED020I12-F2 Single IGBT Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaN EiceDRIVER™ product family Single-channel functional and reinforced isolated gate-drive ICs for high-voltage enhancement-mode GaN HEMTs Features • Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products) – low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink) – resistor programmable gate current (typ. 10 mA) in steady “on” state – programmable negative gate voltage to completely avoid spurious turn-on • Single output supply voltage (typ.