1EDF5673F Description
CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state. Besides, due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be needed. The widely used RC-coupled gate driver fulfils these requirements, however it suffers from a duty-cycle dependence of switching dynamics and the lack of negative gate drive in specific...
1EDF5673F Key Features
- Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products)
- low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink)
- resistor programmable gate current (typ. 10 mA) in steady “on” state
- programmable negative gate voltage to pletely avoid spurious turn-on
- Single output supply voltage (typ. 8 V, floating)
- Switching behavior independent of duty-cycle (2 "off" voltage levels)
- Differential concept to ensure negative gate drive voltage under any condition
- Fast input-to-output propagation (37 ns) with excellent stability (+7/-6 ns)
- Galvanic input-to-output isolation based on coreless transformer (CT) technology
- mon mode transient immunity (CMTI) > 200 V/ns