Datasheet4U Logo Datasheet4U.com

1EDF5673F - GaN gate driver

Download the 1EDF5673F datasheet PDF. This datasheet also covers the 1EDF5673K variant, as both devices belong to the same gan gate driver family and are provided as variant models within a single manufacturer datasheet.

General Description

CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state.

Besides, due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may be needed.

Key Features

  • Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products).
  • low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink).
  • resistor programmable gate current (typ. 10 mA) in steady “on” state.
  • programmable negative gate voltage to completely avoid spurious turn-on.
  • Single output supply voltage (typ. 8 V, floating).
  • Switching behavior independent of duty-cycle (2 "off" voltage levels).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1EDF5673K-Infineon.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaN EiceDRIVER™ product family Single-channel functional and reinforced isolated gate-drive ICs for high-voltage enhancement-mode GaN HEMTs Features • Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN™, GIT technology based products) – low driving impedance (on-resistance 0.85 Ω source, 0.35 Ω sink) – resistor programmable gate current (typ. 10 mA) in steady “on” state – programmable negative gate voltage to completely avoid spurious turn-on • Single output supply voltage (typ.