21N05L Datasheet | Infineon

SPD 21N05L SIPMOS® Power Transistor Features - N channel - Enhancement mode - Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current - Logic Level - dv/dt rated - 175˚C operating temperature VDS RDS(on) ID 55 0.04 20 V Ω A Type SPD21N05L SPU21N05L Package Ordering Code Packaging P-TO252 Q67040-S4137 Tape and Reel P-TO251-3-1 Q67040-S4131-A2 Tube Pin 1 Pin 2 Pin 3 GDS Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 ˚C TC = 100 ˚C ID Pulsed drain current TC = 25 ˚C Avalanche energy, single pulse ID = 20 A, VDD = 25 V, RGS = 25 Ω IDpulse EAS Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR dv/dt IS = 20 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation TC = 25 ˚C VGS Ptot Operating and storage temperature IEC climatic category; DIN IEC 68-1...