21N50C3
21N50C3 is manufactured by Infineon.
SPB21N50C3 Cool MOS™ Power Transistor
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
VDS @ Tjmax RDS(on) ID
560 0.19 21
PG-TO263
V Ω A
Type SPB21N50C3
Package PG-TO263
Ordering Code Q67040-S4566
Marking 21N50C3
Maximum Ratings Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol SPB ID 21 13.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt 63 690 1 21 ±20 ±30 208
Value
Unit A
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=10A, VDD=50V
A mJ
Avalanche energy, repetitive tAR limited by...
