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2ED3141MC12L - Dual-channel isolated gate driver

This page provides the datasheet information for the 2ED3141MC12L, a member of the 2ED3140MC12L Dual-channel isolated gate driver family.

Datasheet Summary

Description

The EiceDRIVER™ 2ED314xMC12L is a family of dual-channel isolated gate driver ICs designed to drive Si MOSFETs, IGBTs, and SiC MOSFETs.

All products are available in a 14-pin DSO package with 8 mm input-to-output creepage and provide reinforced isolation.

Features

  • Dual-channel isolated gate driver.
  • To be used with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si, and SiC MOSFETs.
  • Up to 6.5 A typical peak output current.
  • 39 ns propagation delay with 5 ns channel-to-channel delay mismatch (skew).
  • 35 V absolute maximum output supply voltage.
  • High common-mode transient immunity, CMTI > 200 kV/µs.
  • Active shutdown and short circuit clamping.
  • Galvanically isolated coreless transformer gate driver.

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Datasheet preview – 2ED3141MC12L

Datasheet Details

Part number 2ED3141MC12L
Manufacturer Infineon
File Size 4.45 MB
Description Dual-channel isolated gate driver
Datasheet download datasheet 2ED3141MC12L Datasheet
Additional preview pages of the 2ED3141MC12L datasheet.

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Full PDF Text Transcription

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EiceDRIVER™ 2ED314xMC12L (2ED-X3 Compact) Datasheet 2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control Features • Dual-channel isolated gate driver • To be used with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si, and SiC MOSFETs • Up to 6.5 A typical peak output current • 39 ns propagation delay with 5 ns channel-to-channel delay mismatch (skew) • 35 V absolute maximum output supply voltage • High common-mode transient immunity, CMTI > 200 kV/µs • Active shutdown and short circuit clamping • Galvanically isolated coreless transformer gate driver • 3.3 V and 5 V input supply voltage • 8 mm input-to-output and 3.
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