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2ED4820-EM

Manufacturer: Infineon
2ED4820-EM datasheet preview

Datasheet Details

Part number 2ED4820-EM
Datasheet 2ED4820-EM-Infineon.pdf
File Size 1.16 MB
Manufacturer Infineon
Description 48V smart high-side MOSFET gate driver
2ED4820-EM page 2 2ED4820-EM page 3

2ED4820-EM Overview

Description 2ED4820-EM is a gate driver designed for high current 48 V automotive applications, with powerful gate outputs to drive many MOSFETs in parallel in order to minimize the conduction losses. It supports the back-to-back configuration, both mon source and mon drain structures, thanks to its two gate outputs. In mon source configuration, one gate output can be used to pre-charge highly capacitive loads.

2ED4820-EM Key Features

  • Extended supply voltage range: 20
  • Two independent high-side gate driver outputs
  • 1 A pull down, 0.3 A pull up for fast switch off/on
  • Device control, configuration and diagnostic via SPI
  • Low supply current in sleep mode IBAT_Q < 5 µA
  • Supports back-to-back MOSFET topologies (mon drain
  • One bidirectional high or low-side analog current sense
  • Configurable overcurrent/short circuit protection
  • Gate undervoltage lock-out
  • Safe state mode (both channels OFF) activated by direct

2ED4820-EM Applications

  • 48 V battery protection switch
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2ED4820-EM Distributor

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