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2ED4820-EM - 48V smart high-side MOSFET gate driver

Datasheet Summary

Description

2ED4820-EM is a gate driver designed for high current 48 V automotive applications, with powerful gate outputs to drive many MOSFETs in parallel in order to minimize the conduction losses.

Features

  • Extended supply voltage range: 20 - 70 V.
  • Two independent high-side gate driver outputs.
  • 1 A pull down, 0.3 A pull up for fast switch off/on.
  • Device control, configuration and diagnostic via SPI.
  • Low supply current in sleep mode IBAT_Q < 5 µA.
  • Supports back-to-back MOSFET topologies (common drain and common source).
  • One bidirectional high or low-side analog current sense interface with configurable gain.
  • Configurable overcu.

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Datasheet preview – 2ED4820-EM

Datasheet Details

Part number 2ED4820-EM
Manufacturer Infineon
File Size 1.16 MB
Description 48V smart high-side MOSFET gate driver
Datasheet download datasheet 2ED4820-EM Datasheet
Additional preview pages of the 2ED4820-EM datasheet.

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Full PDF Text Transcription

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EiceDRIVER™ APD 2ED4820-EM 48 V smart high-side MOSFET gate driver with SPI Features • Extended supply voltage range: 20 - 70 V • Two independent high-side gate driver outputs • 1 A pull down, 0.
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