Datasheet Summary
2ED2181 (4) S06F
650 V half bridge gate driver with integrated bootstrap diode
Features
- Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
- Negative VS transient voltage immunity of -100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) up to + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic operational up to
- 11 V on VS Pin
- Negative voltage tolerance on inputs of
- 5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis
- 3.3 V, 5 V and 15 V input logic patible
- Maximum supply voltage of 25 V
- Shutdown...