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2ED2104S06F Datasheet 650v Half Bridge Gate Driver

Manufacturer: Infineon

Overview: 2ED2181 (4) S06F 2ED2104S06F 650 V half bridge gate driver with integrated bootstrap.

Key Features

  • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
  • Negative VS transient voltage immunity of -100 V.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) up to + 650 V.
  • Maximum bootstrap voltage (VB node) of + 675 V.
  • Integrated ultra-fast, low resistance bootstrap diode.
  • Logic operational up to.
  • 11 V on VS Pin.
  • Negative voltage tolerance on inputs of.
  • 5 V.
  • In.

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