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2ED2108S06F - 650V half bridge gate driver

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Infineon

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2ED2108S06F 650V half bridge gate driver by Infineon - Datasheet Preview — Datasheet preview – 2ED2108S06F

Datasheet Details

Part number	2ED2108S06F
Manufacturer	Infineon
File Size	1.32 MB
Description	650V half bridge gate driver
Datasheet	2ED2108S06F Datasheet
Additional preview pages of the 2ED2108S06F datasheet.

Product details

Description

The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
Negative VS transient immunity of 100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) upto + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
Logic operational up to.
11 V on VS Pin.
Negative voltage tolerance on inputs of.
5 V.
Independent under voltage lockout for both chann.

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Published: Apr 13, 2020 |