Datasheet Summary
2ED2108 (4) S06F (J)
2ED2108 (4) S06F (J)
650 V half bridge gate driver with integrated bootstrap diode
Features
- Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
- Negative VS transient immunity of 100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) upto + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic operational up to
- 11 V on VS Pin
- Negative voltage tolerance on inputs of
- 5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis
- 3.3 V, 5 V and 15 V input logic patible
- Maximum supply voltage of 25 V
- Dual...