| Part number | 2ED21064S06J |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.09 MB |
| Description | 650V high-side and low-side gate driver |
| Datasheet |
 2ED21064S06J Datasheet
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| Note |
This datasheet PDF includes multiple part numbers: 2ED21064S06J, 2ED2106S06F. Please refer to the document for exact specifications by model. |
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Description The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC = 15 V) on transient voltages.There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature
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