Description
The 2ED2106(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
Features
- Product summary.
- Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
- Negative VS transient immunity of 100 V.
- Floating channel designed for bootstrap operation.
- Operating voltages (VS node) upto + 650 V.
- Maximum bootstrap voltage (VB node) of + 675 V.
- Integrated ultra-fast, low resistance bootstrap diode.
- Logic operational up to.
- 11 V on VS Pin.
- Negative voltage tolerance on inputs of.
- 5 V.
- Independent under voltage lock.
2ED2106S06F Datasheet
