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2EDF5215F - high-side and low-side gate driver

General Description

3 Functional description 4 Block diagram

Key Features

  • 250 V high and low-side gate driver.
  • -250 V negative HS transient immunity due to galvanic isolation.
  • 100 V/ns dV/dt robustness due to CT technology.
  • 5 A / 9 A source / sink capability.
  • +9 ns /-5 ns delay accuracy.
  • 4 ns maximum delay matching.
  • 1.2 V output clamping threshold in UVLO condition.

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Datasheet Details

Part number 2EDF5215F
Manufacturer Infineon
File Size 1.82 MB
Description high-side and low-side gate driver
Datasheet download datasheet 2EDF5215F Datasheet

Full PDF Text Transcription for 2EDF5215F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2EDF5215F. For precise diagrams, and layout, please refer to the original PDF.

EiceDRIVER™ 2EDF5215F, 2EDF5215G 250 V, 5 A/9 A high-side and low-side gate driver ICs EiceDRIVER™ 2EDF5215F and 2EDF5215G are designed to drive low-side and high-side MO...

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EDF5215F and 2EDF5215G are designed to drive low-side and high-side MOSFETs. A strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The inputs are independently controlled and can overlap enabling the use in synchronous rectifiers and full-bridge with diagonal driving scheme. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving.

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