• Part: 2EDF5215F
  • Description: high-side and low-side gate driver
  • Manufacturer: Infineon
  • Size: 1.82 MB
Download 2EDF5215F Datasheet PDF
Infineon
2EDF5215F
Features - 250 V high and low-side gate driver - -250 V negative HS transient immunity due to galvanic isolation - 100 V/ns d V/dt robustness due to CT technology - 5 A / 9 A source / sink capability - +9 ns /-5 ns delay accuracy - 4 ns maximum delay matching - 1.2 V output clamping threshold in UVLO condition - <2 μs fast start-up time in bootstrap operation - Available in DSO-8 (5 mm x 6 mm) and VDSON-8 (4 mm x 4 mm) Product validation Fully qualified for industrial grade applications. Controller VBULK HB HO Potential topologies - Half-bridge/Full-bridge - Full-bridge with diagonal driving scheme - Two switch and active clamp forward converter PWM1 PWM2 VDD VSS Eice DRIVER™ LI 2EDF5215 VDD LO Potential applications - Server and tele DC-DC converter - Synchronous rectification for SMPS - Motor drives and power tools - Low-speed electric vehicles (LSEV) - Solar optimizers and micro-inverters Table 1 Part number 2EDF5215F 2EDF5215G Eice DRIVER™ 2EDF5215x product...