Datasheet4U Logo Datasheet4U.com

2EDF5215F - high-side and low-side gate driver

Datasheet Summary

Description

3 Functional description 4 Block diagram

Features

  • 250 V high and low-side gate driver.
  • -250 V negative HS transient immunity due to galvanic isolation.
  • 100 V/ns dV/dt robustness due to CT technology.
  • 5 A / 9 A source / sink capability.
  • +9 ns /-5 ns delay accuracy.
  • 4 ns maximum delay matching.
  • 1.2 V output clamping threshold in UVLO condition.

📥 Download Datasheet

Datasheet preview – 2EDF5215F

Datasheet Details

Part number 2EDF5215F
Manufacturer Infineon
File Size 1.82 MB
Description high-side and low-side gate driver
Datasheet download datasheet 2EDF5215F Datasheet
Additional preview pages of the 2EDF5215F datasheet.

📁 Similar Datasheet

  • 2ED020I12-F - Dual IGBT Driver (eupec GmbH)
  • 2ED300C17 - Dual IGBT Driver (Eupec)
  • 2EDL1S - Power Entry Module (Tyco)
  • 2EDL1S - Power Entry Module Filters (corcom)
  • 2EDL1SC - Power Entry Module (Tyco)
  • 2EDL1SC - Power Entry Module Filters (corcom)
  • 2EDL1SCM - Power Entry Module (Tyco)
  • 2EDL1SCM - Power Entry Module Filters (corcom)
  • 2EDL1SM - Power Entry Module (Tyco)
  • 2EDL1SM - Power Entry Module Filters (corcom)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
EiceDRIVER™ 2EDF5215F, 2EDF5215G 250 V, 5 A/9 A high-side and low-side gate driver ICs EiceDRIVER™ 2EDF5215F and 2EDF5215G are designed to drive low-side and high-side MOSFETs. A strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The inputs are independently controlled and can overlap enabling the use in synchronous rectifiers and full-bridge with diagonal driving scheme. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving.
Published: |