Download the 2EDF5215G datasheet PDF.
This datasheet also covers the 2EDF5215F variant, as both devices belong to the same high-side and low-side gate driver family and are provided as variant models within a single manufacturer datasheet.
General Description
3
Functional description
4 Block diagram
Key Features
250 V high and low-side gate driver.
-250 V negative HS transient immunity due to galvanic
isolation.
100 V/ns dV/dt robustness due to CT technology.
5 A / 9 A source / sink capability.
+9 ns /-5 ns delay accuracy.
4 ns maximum delay matching.
1.2 V output clamping threshold in UVLO condition.
Full PDF Text Transcription for 2EDF5215G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2EDF5215G. For precise diagrams, and layout, please refer to the original PDF.
EiceDRIVER™ 2EDF5215F, 2EDF5215G 250 V, 5 A/9 A high-side and low-side gate driver ICs EiceDRIVER™ 2EDF5215F and 2EDF5215G are designed to drive low-side and high-side MO...
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EDF5215F and 2EDF5215G are designed to drive low-side and high-side MOSFETs. A strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The inputs are independently controlled and can overlap enabling the use in synchronous rectifiers and full-bridge with diagonal driving scheme. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving.
2EDF5215G Datasheet
