2EDF5215G Description
3 Functional description.
2EDF5215G Key Features
- 250 V high and low-side gate driver
- 250 V negative HS transient immunity due to galvanic
- 100 V/ns dV/dt robustness due to CT technology
- 5 A / 9 A source / sink capability
- +9 ns /-5 ns delay accuracy
- 4 ns maximum delay matching
- 1.2 V output clamping threshold in UVLO condition
- <2 μs fast start-up time in bootstrap operation
- Available in DSO-8 (5 mm x 6 mm) and VDSON-8 (4 mm x 4