2EDF5215G Datasheet PDF - Infineon high-side and low-side gate driver Specs

2EDF5215G - high-side and low-side gate driver

This page provides the datasheet information for the 2EDF5215G, a member of the 2EDF5215F high-side and low-side gate driver family.

Datasheet Summary

Description

3 Functional description 4 Block diagram

Features

250 V high and low-side gate driver.
-250 V negative HS transient immunity due to galvanic isolation.
100 V/ns dV/dt robustness due to CT technology.
5 A / 9 A source / sink capability.
+9 ns /-5 ns delay accuracy.
4 ns maximum delay matching.
1.2 V output clamping threshold in UVLO condition.

Datasheet Details

Part number	2EDF5215G
Manufacturer	Infineon
File Size	1.82 MB
Description	high-side and low-side gate driver
Datasheet	2EDF5215G Datasheet
Additional preview pages of the 2EDF5215G datasheet.

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Full PDF Text Transcription

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EiceDRIVER™ 2EDF5215F, 2EDF5215G 250 V, 5 A/9 A high-side and low-side gate driver ICs EiceDRIVER™ 2EDF5215F and 2EDF5215G are designed to drive low-side and high-side MOSFETs. A strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The inputs are independently controlled and can overlap enabling the use in synchronous rectifiers and full-bridge with diagonal driving scheme. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving.

Published: May 11, 2025 |