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2EDL803X - junction-isolated high-side and low-side gate driver

Datasheet Summary

Description

The 2EDL803x is designed to drive both high-side and low-side MOSFETs in a half-bridge configuration.

The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage.

Version 4 provides full 4 A current capability, while version 3 provides 3 A.

Features

  • Level-shit high-side low-side dual channel driver.
  • Independent high-side and low-side TTL logic inputs.
  • 3 A & 4 A source / 6 A sink output current capability.
  • 120 V absolute maximum boot voltage.
  • Integrated bootstrap diode.
  • -10 V to 20 V input pin capability for increased robustness.
  • -5 A output pin reverse current capability.
  • -12 V absolute maximum negative voltage on HS.
  • 8 V to 17 V supply voltage operating range.

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Datasheet preview – 2EDL803X

Datasheet Details

Part number 2EDL803X
Manufacturer Infineon
File Size 1.50 MB
Description junction-isolated high-side and low-side gate driver
Datasheet download datasheet 2EDL803X Datasheet
Additional preview pages of the 2EDL803X datasheet.

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Full PDF Text Transcription

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EiceDRIVER™ 2EDL803X 120 V boot, 3 A / 4 A, junction-isolated high-side and low-side gate driver IC Datasheet Features • Level-shit high-side low-side dual channel driver • Independent high-side and low-side TTL logic inputs • 3 A & 4 A source / 6 A sink output current capability • 120 V absolute maximum boot voltage • Integrated bootstrap diode • -10 V to 20 V input pin capability for increased robustness • -5 A output pin reverse current capability • -12 V absolute maximum negative voltage on HS • 8 V to 17 V supply voltage operating range • UVLO for both high-side and low-side driver • Fast propagation delay (< 35 ns) • 2 ns typical delay matching • Enable / disable functionality in SON10 (3 x 3) package • Ofered in SON8 (4x4), SON10 (4x4) and SON10 (3x3) package • Specified from -40ºC
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