Datasheet Details
| Part number | 6ED2230S12T |
|---|---|
| Manufacturer | Infineon |
| File Size | 3.25 MB |
| Description | 1200V Three Phase Gate Driver |
| Datasheet |
 6ED2230S12T Datasheet
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General Description
The 6ED2230S12T is a high voltage, high speed IGBT with three independent high side and low side referenced output channels for three phase applications.
Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
Key Features
- Infineon Thin-Film-SOI technology.
- Fully operational to +1200 V.
- Integrated Ultra‐fast Bootstrap Diode.
- Floating channel designed for bootstrap operation.
- Output source/sink current capability +0.35 A/‐0.65 A.
- Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology.
- Undervoltage lockout for both channels.
- 3.3 V, 5 V, and 15 V input logic compatible.
- Over current prote.