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6ED2230S12T Datasheet PDF

Infineon Technologies 6ED2230S12T

The 6ED2230S12T is a high voltage, high speed IGBT with three independent high side and low side referenced output channels for three phase applications. The logic input is compatible with standard CMOS or TTL outputs, down to 3.3 V logic.
Part No. 6ED2230S12T
Datasheet 6ED2230S12T Download
Manufacturer
Infineon Technologies
Description 1200V Three Phase Gate Driver
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6ED2230S12T datasheet page 1 preview

FEATURES

● Infineon Thin-Film-SOI technology
● Fully operational to +1200 V
● Integrated Ultra‐fast Bootstrap Diode
● Floating channel designed for bootstrap operation
● Output source/sink current capability +0.35 A/‐0.65 A
● Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology
● Undervoltage lockout for both channels
● 3.3 V, 5 V, and 15 V input logic compatible
● Over current protection with ±5% ITRIP threshold
● Fault reporting, automatic Fault clear and Enable function on the same pin (RFE)
● Matched propagation delay for all channels
● Integrated 460 ns deadtime protection
● Shoot-through (cross-conduction) protection Typical applications Product summary
● VOFFSET
● VCC
● IO+/- (typ.)
● ton/off (typ.)
● Deadtime (typ.) ≤ 1200 V = 13 V - 20 V = 0.35 A/0.65 A = 700 ns/650 ns = 460 ns Package DSO-24 (DSO-28 with 4 pins removed)
● Industrial Drives
● Embedded inverters for Motor Control in Pumps, Fans.
● Commercial and Lite Commercial Air Conditioning

DESCRIPTION

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
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