Datasheet Details
| Part number | 6ED003L06-F2 |
|---|---|
| Manufacturer | Infineon |
| File Size | 663.03 KB |
| Description | 200V 3-phase gate driver |
| Datasheet |
 6ED003L06-F2 Datasheet
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General Description
The devices are full bridge drivers to control power devices like MOSFET or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V.
Based on the used SOI-technology there is an excellent ruggedness on transient voltages.
No parasitic thyristor structures are present in the device.
Key Features
- Infineon thin-film-SOI-technology.
- Maximum blocking voltage +600 V.
- Output source/sink current +0.165 A/-0.375 A.
- Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology.
- Separate control circuits for all six drivers.
- Detection of over current and under voltage supply.
- Externally programmable delay for fault clear after over current detection.
- 'Shut down' of all switches during e.