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AIDW10S65C5 Datasheet PDF

Infineon Technologies AIDW10S65C5

The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes. This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio.
Part No. AIDW10S65C5
Datasheet AIDW10S65C5 Download
Manufacturer
Infineon Technologies
Description Automotive Schottky Diode
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AIDW10S65C5 datasheet page 1 preview

FEATURES

● Revolutionary semiconductor material - Silicon Carbide
● Benchmark switching behavior
● No reverse recovery/ No forward recovery
● Temperature independent switching behavior
● High surge current capability
● Pb-free lead plating; RoHS compliant
● Junction Temperature range from -40°C to 175°C
● System efficiency improvement over Si diodes
● System cost / size savings due to reduced cooling requirements
● Enabling higher frequency / increased power density solutions
● Higher system reliability due to lower operating temperatures
● Reduced EMI Potential

APPLICATIONS

● Traction inverter
● Booster / DCDC Converter
● On board Charger / PFC Product Validation “Qualified for Automotive

APPLICATIONS

. Product Validation according to AEC-Q100/101”

DESCRIPTION

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermal characteristics and low figure of merit (Qc x Vf). This ensures meeting the most stringent application requirements in the 650V voltage class.
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