AIDW30S65C5 Datasheet 650v/30a Silicon Carbide Schottky Diode

Manufacturer: Infineon

Overview: AIDW30S65C5 CoolSiC™ Automotive Schottky Diode 650V G5 650V/30A Silicon Carbide Schottky Diode in.

Datasheet Details

Part number	AIDW30S65C5
Manufacturer	Infineon
File Size	833.65 KB
Description	650V/30A Silicon Carbide Schottky Diode
Datasheet	AIDW30S65C5-Infineon.pdf

General Description

The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes.

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermal characteristics and low figure of merit (Qc x Vf).

This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio.

Key Features

Revolutionary semiconductor material - Silicon Carbide.
Benchmark switching behavior.
No reverse recovery/ No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Junction Temperature range from -40°C to 175°C.
System efficiency improvement over Si diodes.
System cost / size savings due to reduced cooling requirements.
Enabling higher frequency / increased power densit.

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