Datasheet4U Logo Datasheet4U.com

AIDW30S65C5 - 650V/30A Silicon Carbide Schottky Diode

Description

The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes.

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Benchmark switching behavior.
  • No reverse recovery/ No forward recovery.
  • Temperature independent switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHS compliant.
  • Junction Temperature range from -40°C to 175°C.
  • System efficiency improvement over Si diodes.
  • System cost / size savings due to reduced cooling requirements.
  • Enabling higher frequency / increased power densit.

📥 Download Datasheet

Datasheet preview – AIDW30S65C5

Datasheet Details

Part number AIDW30S65C5
Manufacturer Infineon
File Size 833.65 KB
Description 650V/30A Silicon Carbide Schottky Diode
Datasheet download datasheet AIDW30S65C5 Datasheet
Additional preview pages of the AIDW30S65C5 datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
AIDW30S65C5 CoolSiC™ Automotive Schottky Diode 650V G5 650V/30A Silicon Carbide Schottky Diode in TO247-3 Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -40°C to 175°C  System efficiency improvement over Si diodes  System cost / size savings due to reduced cooling requirements  Enabling higher frequency / increased power density solutions  Higher system reliability due to lower operating temperatures  Reduced EMI Potential Applications  Traction inverter  Booster / DCDC Converter  On board Charger / PFC Product Validation “Qualified for Aut
Published: |