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AIKQ120N75CP2 - EDT2 IGBT and emitter controlled diode

Description

C TO-247PLUS 3Pin 2021-10-27 restricted Copyright © Infineon Te Type AIKQ120N75CP2 G E Package PG-TO247PLUS-3 Marking AKQ12FCP Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-03-16 AIKQ120N75CP2

Features

  • VCE = 750 V.
  • IC = 120 A.
  • 750 V collector-emitter blocking voltage capability.
  • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems.
  • Very low VCE(sat), 1.30 V at ICnom = 120 A, 25°C.
  • Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V.
  • Self limiting current under short circuit condition.
  • Positive thermal coefficient and very tight parameter distribution for easy paralleling.
  • Dr.

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Datasheet Details

Part number AIKQ120N75CP2
Manufacturer Infineon
File Size 1.42 MB
Description EDT2 IGBT and emitter controlled diode
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AIKQ120N75CP2 EDT2 IGBT EDT2 IGBT and emitter controlled diode in TO247PLUS package Features • VCE = 750 V • IC = 120 A • 750 V collector-emitter blocking voltage capability • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems • Very low VCE(sat), 1.
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