Part AIKQ120N75CP2
Description EDT2 IGBT and emitter controlled diode
Category Diode
Manufacturer Infineon
Size 1.42 MB
Infineon

AIKQ120N75CP2 Overview

Key Features

  • 750 V collector-emitter blocking voltage capability
  • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems
  • Very low VCE(sat), 1.30 V at ICnom = 120 A, 25°C
  • Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V
  • Self limiting current under short circuit condition
  • Positive thermal coefficient and very tight parameter distribution for easy paralleling
  • Drop-in replacement for previous generation devices IC = 120 A, Tc = 100°C
  • Excellent current sharing in parallel operation
  • Smooth switching characteristics, low EMI signature
  • Low gate charge QG