AIKQ120N75CP2 Description
Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-03-16 AIKQ120N75CP2 EDT2 IGBT Table of contents Table of contents Description.
AIKQ120N75CP2 Key Features
- VCE = 750 V
- IC = 120 A
- 750 V collector-emitter blocking voltage capability
- Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems
- Very low VCE(sat), 1.30 V at ICnom = 120 A, 25°C
- Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V
- Self limiting current under short circuit condition
- Positive thermal coefficient and very tight parameter distribution for easy paralleling
- Drop-in replacement for previous generation devices IC = 120 A, Tc = 100°C
- Excellent current sharing in parallel operation