AIKQ200N75CP2 - EDT2 IGBT and emitter controlled diode

Product Overview

Infineon

Datasheet Details

Part number	AIKQ200N75CP2
Manufacturer	Infineon
File Size	1.30 MB
Description	EDT2 IGBT and emitter controlled diode
Datasheet	AIKQ200N75CP2 Datasheet
Additional preview pages of the AIKQ200N75CP2 datasheet.

Product details

Description

C TO-247PLUS 3Pin 2021-10-27 restricted Copyright © Infineon Te Type AIKQ200N75CP2 G E Package PG-TO247PLUS-3 Marking AKQ20FCP Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-03-16 AIKQ200N75CP2 EDT2 IGBT Table of contents Table of contents Description

Features

VCE = 750 V.
IC = 200 A.
Best-in-class highest power density, IC = 200 A.
750 V collector-emitter blocking voltage capability.
Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems.
Very low VCE(sat), 1.30 V at ICnom = 200 A, 25°C.
Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V.
Self limiting current under short circuit condition.
Positive thermal coefficient and very tigh.

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Published: May 14, 2025 |