Infineon Technologies AIKQ200N75CP2
EDT2 IGBT and emitter controlled diode
| Part No. | AIKQ200N75CP2 |
|---|---|
| Datasheet | AIKQ200N75CP2 Download |
| Manufacturer |  Infineon Technologies |
| Description | EDT2 IGBT and emitter controlled diode |
| Buy | Stock & Price |
FEATURES
● VCE = 750 V● IC = 200 A
● Best-in-class highest power density, IC = 200 A
● 750 V collector-emitter blocking voltage capability
● Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems
● Very low VCE(sat), 1.30 V at ICnom = 200 A, 25°C
● Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V
● Self limiting current under short circuit condition
● Positive thermal coefficient and very tight parameter distribution for easy paralleling
● A Reduced number of parallel devices is required due to Inom = 200 A
● Excellent current sharing in parallel operation
● Smooth switching characteristics, low EMI signature
● Low gate charge QG
● Simple gate drive design
● Co-packed with fast soft recovery emitter controlled 3 diode
● TO247PLUS package with high creepage distance
● High reliability Potential applications
● xEV Inverter
● DC-link discharge switch
● Automotive aux-drives Product validation
● Qualified for automotive applications
● Qualified acco...
