Part AIKQ200N75CP2
Description EDT2 IGBT and emitter controlled diode
Category Diode
Manufacturer Infineon
Size 1.30 MB
Infineon

AIKQ200N75CP2 Overview

Key Features

  • Best-in-class highest power density, IC = 200 A
  • 750 V collector-emitter blocking voltage capability
  • Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems
  • Very low VCE(sat), 1.30 V at ICnom = 200 A, 25°C
  • Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V
  • Self limiting current under short circuit condition
  • Positive thermal coefficient and very tight parameter distribution for easy paralleling
  • A Reduced number of parallel devices is required due to Inom = 200 A
  • Excellent current sharing in parallel operation
  • Smooth switching characteristics, low EMI signature