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AIKW50N65DF5 - IGBT

Description

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Features

  • C High speed F5 technology offering:.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • IGBT copacked with RAPID 1 fast and soft antiparallel diode.
  • Maximum junction temperature 175°C.
  • Dynamically stress tested.
  • Qualified according to AEC-Q101.
  • Green package (RoHS compliant).
  • Complete product spectrum and PSpice Models: http://www. inf.

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Full PDF Text Transcription

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AIKW50N65DF5 Highspeedswitchingseriesfifthgeneration HighspeedfastIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode  FeaturesandBenefits: C HighspeedF5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •Dynamicallystresstested •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.
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