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AIKYX200N75CP2 Datasheet PDF

Infineon Technologies AIKYX200N75CP2

Duo Pack EDT2 IGBT and emitter controlled diode

Part No. AIKYX200N75CP2
Datasheet AIKYX200N75CP2 Download
Manufacturer
Infineon Technologies
Description Duo Pack EDT2 IGBT and emitter controlled diode
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AIKYX200N75CP2 datasheet page 1 preview

FEATURES

● VCE = 750 V
● IC = 200 A
● Best-in-class 750 V TO247 PLUS - Highest power output per device
● Suitable for 470 V VDC systems and increased overvoltage margin for 400 V VDC systems
● Very low VCEsat (C-KE) = 1.25 V (typ.) at ICnom = 200 A, 25°C
● Short circuit robust tsc = 3 µs at VCE = 470 V, VGE = 15 V
● Up to 40% less System Rth due to reflow capability, increased power output
● 30% Less Turn On Energy loss compared to 3 pin devices due to Kelvin emitter
● Self limiting current under short circuit condition
● Positive thermal coefficient and very tight parameter distribution for easy paralleling
● A Reduced number of parallel devices is required due to Inom = 200 A
● Excellent current sharing in parallel operation
● Low gate charge QG
● Smooth switching characteristics
● Simple gate driver design
● Co-packed with fast soft recovery emitter controlled diode (Emcon3)
● Low EMI signature
● TO247PLUS package with high creepage distance 6.6 mm
● High reliability and operating l...
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