AIMBG120R030M1 Description
Pin 1 - Gate Pin 2 - Kelvin sense contact Pin 3…7 - Source Tab - Drain Note: The source and sense pins are not exchangeable, their exchange might lead to malfunction Type AIMBG120R030M1 Package PG-TO263-7-HV-ND5.8 Marking AS30MM1 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2024-03-26 AIMBG120R030M1 CoolSiC™ 1200 V SiC Trench MOSFET Table...
AIMBG120R030M1 Key Features
- VDSS = 1200 V at Tvj = -55...175°C
- IDDC = 70 A at TC = 25°C
- RDS(on) = 30 mΩ at VGS = 20 V, Tvj = 25°C
- New performance-optimized chip technology (Gen1p) with improved RDSon- A
- Best in class switching energy for lower switching losses and reduced cooling efforts
- Lowest device capacitances for higher switching speeds and higher power density
- A bination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable 2021-10-27 unipolar restricted
- Reduced total gate charge QG for lower driving power and losses
- Increased remended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
- XT die attach technology for best in class thermal performance