AIMZA75R008M1H Datasheet | Infineon

Public AIMZA75R008M1H Final datasheet MOSFET Cool Si C™ Automotive Power Device 750 V G1 The 750 V Cool Si C™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap Si C material characteristics, the 750V Cool Si C™ MOSFET offers a unique bination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency. Features - Highly robust 750V technology, 100% avalanche tested - Best‑in‑class RDS(on) x Qfr - Excellent RDS(on) x Qoss and RDS(on) x QG - Unique bination of low Crss/Ciss and high VGS(th) - Infineon proprietary die attach technology - Driver source pin available - Best‑in‑class RDS(on) Benefits - Enhanced robustness and reliability for bus voltages beyond 500 V - Superior efficiency in hard switching - Higher switching frequency in soft switching topologies - Robustness against parasitic turn on for unipolar gate driving - Reduced switching losses through improved gate control Potential applications - Uni‑ and bidirectional On Board Chargers and HV‑LV DCDC converters (hard switching half bridges and soft switching topologies) Product validation Qualified according to AEC Q101 Please note: The source and driver source pins are not exchangeable. Their exchange might lead to malfunction. Table 1 Key Performance Parameters Parameter Value Unit VDSS over full Tj,range RDS(on),typ 7.8...