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AIMZA75R008M1H - 750V Automotive MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • Highly robust 750V technology, 100% avalanche tested.
  • Best‑in‑class RDS(on) x Qfr.
  • Excellent RDS(on) x Qoss and RDS(on) x QG.
  • Unique combination of low Crss/Ciss and high VGS(th).
  • Infineon proprietary die attach technology.
  • Driver source pin available.
  • Best‑in‑class RDS(on) Benefits.
  • Enhanced robustness and reliability for bus voltages beyond 500 V.
  • Superior efficiency in hard switching.
  • Higher switching f.

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Full PDF Text Transcription for AIMZA75R008M1H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AIMZA75R008M1H. For precise diagrams, and layout, please refer to the original PDF.

Public AIMZA75R008M1H Final datasheet MOSFET CoolSiC™ Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in ...

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lSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 750V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

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