AUIRF2903ZL
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, Ro HS pliant
- Automotive Qualified
- Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.
VDSS RDS(on) typ. max.
ID (Silicon Limited) ID (Package Limited)
AUIRF2903ZS AUIRF2903ZL
30V 1.9m 2.4m 235A 160A
D2Pak AUIRF2903ZS
S GD
TO-262 AUIRF2903ZL
G Gate
D Drain
S Source
Base part number
AUIRF2903ZL AUIRF2903ZS
Package Type
TO-262 D2-Pak
Standard Pack
Form
Quantity
Tu...
