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AUIRF2907Z - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   AUIRF2907Z HEXFET® Power MOSFET VDSS RDS(on) max. 75V 4.5m ID (Silicon Limited) ID (Package Limited) 170A 75A.

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Datasheet preview – AUIRF2907Z

Datasheet Details

Part number AUIRF2907Z
Manufacturer Infineon
File Size 373.58 KB
Description Power MOSFET
Datasheet download datasheet AUIRF2907Z Datasheet
Additional preview pages of the AUIRF2907Z datasheet.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE   Features  Advanced Planar Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   AUIRF2907Z HEXFET® Power MOSFET VDSS RDS(on) max. 75V 4.5m ID (Silicon Limited) ID (Package Limited) 170A 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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