AUIRF2907Z
Features
- Advanced Planar Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, Ro HS pliant
- Automotive Qualified
-
HEXFET® Power MOSFET
VDSS RDS(on) max.
75V 4.5m
ID (Silicon Limited) ID (Package Limited)
170A 75A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications
G Gate
TO-220AB AUIRF2907Z
D Drain
S Source
Base part number AUIRF2907Z
Package Type TO-220
Standard Pack
Form...
