Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
Advanced Planar Technology.
Ultra Low On-Resistance.
175°C Operating Temperature.
Fast Switching.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
AUIRF2907Z
HEXFET® Power MOSFET
VDSS RDS(on) max. 75V 4.5m
ID (Silicon Limited) ID (Package Limited)
170A 75A.
Full PDF Text Transcription for AUIRF2907Z (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRF2907Z. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE Features Advanced Planar Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax...
View more extracted text
emperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRF2907Z HEXFET® Power MOSFET VDSS RDS(on) max. 75V 4.5m ID (Silicon Limited) ID (Package Limited) 170A 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .