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AUIRF6218L - Power MOSFET

This page provides the datasheet information for the AUIRF6218L, a member of the AUIRF6218S Power MOSFET family.

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • P-Channel MOSFET.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

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Datasheet preview – AUIRF6218L

Datasheet Details

Part number AUIRF6218L
Manufacturer Infineon
File Size 332.37 KB
Description Power MOSFET
Datasheet download datasheet AUIRF6218L Datasheet
Additional preview pages of the AUIRF6218L datasheet.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features  Advanced Planar Technology  Low On-Resistance  P-Channel MOSFET  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
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