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AUIRF6218S Datasheet Power MOSFET

Manufacturer: Infineon

Overview:   AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L.

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

VDSS HEXFET® Power MOSFET -150V RDS(on) max.

Key Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • P-Channel MOSFET.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
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