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Features Advanced Process Technology Low On-Resistance Logic Level Gate Drive P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified*
AUTOMOTIVE GRADE
AUIRF7207Q
S 1
S2 S3 G4
A 8D 7D 6D 5D
Top View
HEXFET® Power MOSFET
VDSS
-20V
RDS(on) max ID
0.06 -5.4A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
AUIRF7207Q Datasheet
