AUIRF7207Q - Power MOSFET

Infineon

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

Advanced Process Technology.
Low On-Resistance.
Logic Level Gate Drive.
P-Channel MOSFET.
Dynamic dV/dT Rating.
150°C Operating Temperature.
Fast Switching.
Fully Avalanche Rated.
Lead-Free, RoHS Compliant.
Automotive Qualified.

📥 Download Datasheet

AUIRF7207Q power mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	AUIRF7207Q
Manufacturer	Infineon
File Size	381.20 KB
Description	Power MOSFET
Datasheet	AUIRF7207Q Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AUIRF7207Q	Power MOSFET	International Rectifier

Other Datasheets by Infineon

Part Number	Description
AUIRF7103Q	Dual N-Channel MOSFET
AUIRF7303Q	Dual N-Channel MOSFET
AUIRF7304Q	Dual P-Channel MOSFET
AUIRF7309Q	Dual N/P-Channel MOSFET
AUIRF7313Q	Dual N-Channel MOSFET
AUIRF7316Q	Dual P-Channel MOSFET
AUIRF7319Q	Dual N/P-Channel MOSFET
AUIRF7341Q	Dual N-Channel MOSFET
AUIRF7342Q	Dual P-Channel MOSFET
AUIRF7343Q	Dual N/P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Features Advanced Process Technology Low On-Resistance Logic Level Gate Drive P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified* AUTOMOTIVE GRADE AUIRF7207Q S 1 S2 S3 G4 A 8D 7D 6D 5D Top View HEXFET® Power MOSFET VDSS -20V RDS(on) max ID 0.06 -5.4A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.