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AUIRF7207Q - Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  •  Advanced Process Technology.
  •  Low On-Resistance.
  •  P-Channel MOSFET.
  •  Dynamic dV/dT Rating.
  •  150°C Operating Temperature.
  •  Fast Switching.
  •  Fully Avalanche Rated.
  •  Lead-Free, RoHS Compliant.
  •  Automotive Qualified.

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  AUTOMOTIVE GRADE AUIRF7207Q 8 Features  Advanced Process Technology  Low On-Resistance  P-Channel MOSFET  Dynamic dV/dT Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free, RoHS Compliant  Automotive Qualified* Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.  S S S G 1 A D D D D VDSS RDS(on) max ID -20V 0.06 -5.
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