Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Features
- Advanced Planar Technology.
- Dual N Channel MOSFET.
- Low On-Resistance.
- Logic Level Gate Drive.
- Dynamic dv/dt Rating.
- 175°C Operating Temperature.
- Fast Switching.
- Repetitive Avalanche Allowed up to Tjmax.
- Lead-Free, RoHS Compliant.
- Automotive Qualified.
- S1
G1 S2 G2
1 2 3 4
8 D1 7 D1 6 D2 5 D2
Top View
VDSS RDS(on) max. ID.
AUIRF7303Q Datasheet
