Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Features
- l l l l l l l l
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 8 7
Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified.
- D1 D1 D2 D2
V(BR)DSS RDS(on) max. ID
30V 0.05Ω 5.3A
3 4
6 5
Top View.
AUIRF7303Q Datasheet
