AUIRF7313Q - Dual N-Channel MOSFET

Infineon

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

Advanced Planar Technology.
Dual N Channel MOSFET.
Low On-Resistance.
Logic Level Gate Drive.
Dynamic dv/dt Rating.
175°C Operating Temperature.
Fast Switching.
Lead-Free, RoHS Compliant.
Automotive Qualified.

📥 Download Datasheet

AUIRF7313Q dual n-channel mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	AUIRF7313Q
Manufacturer	Infineon
File Size	560.63 KB
Description	Dual N-Channel MOSFET
Datasheet	AUIRF7313Q Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AUIRF7313Q	Power MOSFET	International Rectifier

Other Datasheets by Infineon

Part Number	Description
AUIRF7316Q	Dual P-Channel MOSFET
AUIRF7319Q	Dual N/P-Channel MOSFET
AUIRF7303Q	Dual N-Channel MOSFET
AUIRF7304Q	Dual P-Channel MOSFET
AUIRF7309Q	Dual N/P-Channel MOSFET
AUIRF7341Q	Dual N-Channel MOSFET
AUIRF7342Q	Dual P-Channel MOSFET
AUIRF7343Q	Dual N/P-Channel MOSFET
AUIRF7379Q	Dual N/P-Channel MOSFET
AUIRF7103Q	Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Features  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Lead-Free, RoHS Compliant  Automotive Qualified * AUTOMOTIVE GRADE AUIRF7313Q S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS RDS(on) typ. max. ID 30V 23m 29m 6.9A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.