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AUIRF7313Q - Power MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified.
  • S1 G1 S2 G2 1 2 D1 D1 D2 D2 3 4 6 5 Top View V(BR)DSS RDS(on) typ. max. ID 30V 23mΩ 29mΩ 6.9A.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7313Q Dual N-Channel MOSFET Infineon

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET® Power MOSFET 8 7 Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* S1 G1 S2 G2 1 2 D1 D1 D2 D2 3 4 6 5 Top View V(BR)DSS RDS(on) typ. max. ID 30V 23mΩ 29mΩ 6.9A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.