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AUIRF7416Q - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Low On-Resistance.
  • Logic Level Gate Drive.
  • P Channel MOSFET.
  • Dynamic dv/dt Rating.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

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Datasheet preview – AUIRF7416Q

Datasheet Details

Part number AUIRF7416Q
Manufacturer Infineon
File Size 271.65 KB
Description Power MOSFET
Datasheet download datasheet AUIRF7416Q Datasheet
Additional preview pages of the AUIRF7416Q datasheet.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRF7416Q Features  Advanced Process Technology  Low On-Resistance  Logic Level Gate Drive  P Channel MOSFET  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
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