Datasheet4U Logo Datasheet4U.com

AUIRF7416Q Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

SO-8 AUIRF7416Q Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Overview

PD - 97642 AUTOMOTIVE GRADE.

Key Features

  • l l l l l l l l l AUIRF7416Q HEXFET® Power MOSFET S 1 2 3 4 8 7 Advanced Process Technology Low On-Resistance P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified.
  • A D D D D V(BR)DSS RDS(on) max. ID -30V 0.02Ω -10A S S G 6 5 Top View.