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AUIRF7416Q - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l l l AUIRF7416Q HEXFET® Power MOSFET S 1 2 3 4 8 7 Advanced Process Technology Low On-Resistance P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified.
  • A D D D D V(BR)DSS RDS(on) max. ID -30V 0.02Ω -10A S S G 6 5 Top View.

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PD - 97642 AUTOMOTIVE GRADE Features l l l l l l l l l AUIRF7416Q HEXFET® Power MOSFET S 1 2 3 4 8 7 Advanced Process Technology Low On-Resistance P-Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified* A D D D D V(BR)DSS RDS(on) max. ID -30V 0.02Ω -10A S S G 6 5 Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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