• Part: AUIRF7478Q
  • Description: Power MOSFET
  • Manufacturer: Infineon
  • Size: 374.74 KB
Download AUIRF7478Q Datasheet PDF
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Datasheet Summary

  AUTOMOTIVE GRADE Features - Advanced Planar Technology - Low On-Resistance - Logic Level Gate Drive - Dynamic dv/dt Rating - 150°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, RoHS pliant - Automotive Qualified -   S1 S2 S3 G4 AA 8D 7D 6D 5D Top View VDSS RDS(on) typ. max. ID 60V 20m 26m 7.0A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,...