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AUIRF7478Q - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Logic Level Gate Drive.
  • Dynamic dv/dt Rating.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   S1 S2 S3 G4 AA 8D 7D 6D 5D Top View VDSS RDS(on) typ. max. ID 60V 20m 26m 7.0A.

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Datasheet preview – AUIRF7478Q

Datasheet Details

Part number AUIRF7478Q
Manufacturer Infineon
File Size 374.74 KB
Description Power MOSFET
Datasheet download datasheet AUIRF7478Q Datasheet
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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRF7478Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   S1 S2 S3 G4 AA 8D 7D 6D 5D Top View VDSS RDS(on) typ. max. ID 60V 20m 26m 7.0A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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