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AUIRF7478Q - Power MOSFET

Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Features

  • l l l l l l l l l HEXFET® Power MOSFET S S S G 1 2 3 4 8 7 Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • A A D D D D V(BR)DSS RDS(on) typ. 60V 20mΩ 6 5 max. 26mΩ ID 7.0A Top View.

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AUTOMOTIVE GRADE PD- 96423A AUIRF7478Q Features l l l l l l l l l HEXFET® Power MOSFET S S S G 1 2 3 4 8 7 Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * A A D D D D V(BR)DSS RDS(on) typ. 60V 20mΩ 6 5 max. 26mΩ ID 7.0A Top View Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.
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