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AUIRF7478Q Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: AUTOMOTIVE GRADE PD- 96423A AUIRF7478Q.

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General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

SO-8 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Key Features

  • l l l l l l l l l HEXFET® Power MOSFET S S S G 1 2 3 4 8 7 Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • A A D D D D V(BR)DSS RDS(on) typ. 60V 20mΩ 6 5 max. 26mΩ ID 7.0A Top View.

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Brand Logo Part Number Description Manufacturer
Infineon Logo AUIRF7478Q Power MOSFET Infineon

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