AUIRF7734M2TR Datasheet | Infineon

  AUTOMOTIVE GRADE - Advanced Process Technology - Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications - Exceptionally Small Footprint and Low Profile - High Power Density - Low Parasitic Parameters - Dual Sided Cooling - 175°C Operating Temperature - Repetitive Avalanche Capability for Robustness and Reliability - Lead free, Ro HS and Halogen free -  Automotive Qualified - Automotive Direct FET® Power MOSFET  V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg (typical) 40V 3.8m 4.9m 72A 48n C    Applicable Direct FET® Outline and Substrate Outline  M2 Direct FET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The AUIRF7734M2 bines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced Direct FET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The Direct FET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced Direct FET® packaging platform coupled with the latest silicon technology allows the AUIRF7734M2 to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional Features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These Features bine to make this MOSFET a...