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AUIRF7734M2TR - Power MOSFET

General Description

The AUIRF7734M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96413A AUTOMOTIVE GRADE AUIRF7734M2TR AUIRF7734M2TR1 • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and • • • • • • other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free • Automotive Qualified * Applicable DirectFET® Outline and Substrate Outline  SB SC M2 M4 Automotive DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 3.8mΩ max. ID (Silicon Limited) Qg 4.