AUIRF7734M2TR Datasheet | International Rectifier

- 96413A AUTOMOTIVE GRADE AUIRF7734M2TR AUIRF7734M2TR1 - Advanced Process Technology - Optimized for Automotive Motor Drive, DC-DC and - - - - - - other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability - Lead Free, Ro HS pliant and Halogen Free - Automotive Qualified - Applicable Direct FET® Outline and Substrate Outline  SB SC M2 M4 Automotive Direct FET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 3.8mΩ max. ID (Silicon Limited) Qg 4.9mΩ 72A 48n C S D G S D M2 Direct FET® ISOMETRIC L4 L6 L8 Description The AUIRF7734M2 bines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced Direct FET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The Direct FET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infrared or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET ® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced Direct FET® packaging platform coupled with the latest silicon technology allows the AUIRF7734M2 to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional Features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These Features bine to make...